THEORETICAL AND EXPERIMENTAL INVESTIGATION OF AVALANCHE BREAKDOWN VOLTAGE OF DIODES WITH AN ARBITRARY BASE DOPING PROFILE

Abstract

With the improvement of the elements of the base of modern microelectronics and microwave electronics, the capabilities of devices based on homogeneous semiconductor materials in some cases are no longer satisfactory. At present, these devices are manufactured on the basis of semiconductor eliteaxial structures with a complex doping profile and with parameters corresponding to the calculated ones. Such structures have one more advantage: they do not contain microplasmas [1]. The mechanism leading to the absence of microplasmas is not yet clear. However, in order to predict the characteristics of such systems in the process of their design and manufacture, it becomes necessary to theoretically calculate such an important parameter as the avalanche breakdown voltage Vв.